Title :
Fast aging degradation rate prediction during production test
Author :
Xiaoxiao Wang ; Winemberg, LeRoy ; Haggag, A. ; Chayachinda, Joe ; Saluja, Amandeep ; Tehranipoor, Mohammad
Author_Institution :
Automotive & Ind. Solutions Group, Freescale Semicond., Inc., Austin, TX, USA
Abstract :
A flow to predict a wafer/die´s speed degradation rate without burn-in using ATE tests is presented in this paper. The proposed flow is digital with less than 1μs measurement time per die, allowing it be applied to high volume production test. The accuracy of the proposed flow has been verified by silicon data collected from 5 Freescale® wafers from different production lots. With the proposed flow, the volume of devices requiring burn-in is reduced.
Keywords :
ageing; automatic test equipment; automatic testing; integrated circuit reliability; integrated circuit testing; ATE test; die speed degradation rate; fast aging degradation rate prediction; high volume production test; wafer degradation rate; Aging; Clocks; Degradation; Delays; Semiconductor device measurement; Stress; System-on-chip; Aging Test; NBTI; on-chip sensor; style; styling;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861107
