Title :
Strong quantum-confined Stark effect from light hole excitonic transition in Ge quantum wells for ultra-compact optical modulator
Author :
Chaisakul, Papichaya ; Marris-Morini, D. ; Rouifed, Mohamed Said ; Frigerio, Jacopo ; Isella, Giovanni ; Chrastina, D. ; Vivien, L.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
New possibilities of light modulation in Ge/SiGe quantum wells are experimentally explored using asymmetric polarization dispersion of light-hole excitonic transitions. QCSE from electron-light-hole transition can significantly reduce footprint, energy dissipation over the previously-studied electron-heavy-hole transition.
Keywords :
Ge-Si alloys; elemental semiconductors; excitons; germanium; integrated optics; integrated optoelectronics; light polarisation; optical dispersion; optical modulation; quantum confined Stark effect; semiconductor quantum wells; Ge-SiGe; QCSE; asymmetric polarization dispersion; electron-heavy-hole transition; energy dissipation; light hole excitonic transition; light modulation; quantum wells; quantum-confined Stark effect; ultracompact optical modulator; Absorption; Optical interconnections; Optical modulation; Quantum well devices; Silicon; Silicon germanium; Ge/SiGe multiple quantum wells; Selection rules; Silicon photonics; quantum-confined Stark effect;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644427
