Low voltage driven carbon nanotube field emission cathode

Author

Lee, Chun Gym ; Lee, Sang Jo ; Chi, Eung Joon ; Lee, Byung Gon ; Jeon, Sang Ho ; Ahn, Sang Hyuek ; Hong, Su Bong ; Cho, Sung Hee ; Choe, Deok Hyeon

Author_Institution

Corp. R&D Center, Samsung SDI, Kiheung-Eup, South Korea

fYear

2004

fDate

11-16 July 2004

Firstpage

208

Lastpage

209

Abstract

An under-gate CNT cathode structure was fabricated and characterized. The purpose of this work is to fabricate a cathode with micron-sized CNT-to-counter electrode gap, d_G. Scanning electron microscopy was used to characterize the fabricated cathode. Electrical measurements were made in a vacuum chamber. It was found that cathode-to-gate voltage decreases with decreasing d_G. It was also observed that emitting layer made of high purity CNT powder offers higher performance in terms of emission site density.

Keywords

carbon nanotubes; cathodes; electron field emission; scanning electron microscopy; C; CNT powder; CNT-to-counter electrode gap; cathode size; cathode-to-gate voltage; emission site density; emitting layer; low voltage driven carbon nanotube field emission cathode; scanning electron microscopy; under-gate CNT cathode structure; Anodes; Carbon dioxide; Carbon nanotubes; Cathodes; Electrodes; Electron emission; Fabrication; Low voltage; Powders; Research and development;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2004.1354976

Filename

1354976