DocumentCode :
1875746
Title :
Low voltage driven carbon nanotube field emission cathode
Author :
Lee, Chun Gym ; Lee, Sang Jo ; Chi, Eung Joon ; Lee, Byung Gon ; Jeon, Sang Ho ; Ahn, Sang Hyuek ; Hong, Su Bong ; Cho, Sung Hee ; Choe, Deok Hyeon
Author_Institution :
Corp. R&D Center, Samsung SDI, Kiheung-Eup, South Korea
fYear :
2004
fDate :
11-16 July 2004
Firstpage :
208
Lastpage :
209
Abstract :
An under-gate CNT cathode structure was fabricated and characterized. The purpose of this work is to fabricate a cathode with micron-sized CNT-to-counter electrode gap, dG. Scanning electron microscopy was used to characterize the fabricated cathode. Electrical measurements were made in a vacuum chamber. It was found that cathode-to-gate voltage decreases with decreasing dG. It was also observed that emitting layer made of high purity CNT powder offers higher performance in terms of emission site density.
Keywords :
carbon nanotubes; cathodes; electron field emission; scanning electron microscopy; C; CNT powder; CNT-to-counter electrode gap; cathode size; cathode-to-gate voltage; emission site density; emitting layer; low voltage driven carbon nanotube field emission cathode; scanning electron microscopy; under-gate CNT cathode structure; Anodes; Carbon dioxide; Carbon nanotubes; Cathodes; Electrodes; Electron emission; Fabrication; Low voltage; Powders; Research and development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2004.1354976
Filename :
1354976
Link To Document :
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