Title :
Correlating reliability to yield for liftoff metallization
Author :
Roesch, William J. ; Hamada, Dorothy June M.
Author_Institution :
TriQuint Semicond. Inc., Hillsboro, OR, USA
Abstract :
The methodology of characterizing and reducing defects is one of the key differences between compound semiconductors and silicon devices. This investigation provides a measure of defectivity for the metallization formation techniques used in compounds that are unique compared to silicon devices.
Keywords :
integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; integrated circuit reliability; integrated circuit yield; liftoff metallization; metallization formation; Acceleration; Capacitors; Metals; Reliability; Semiconductor device measurement; Stress; Voltage measurement; acceleration; defects; detection;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861108
