DocumentCode :
1875867
Title :
Robust and regenerable integrally gated carbon nanotube field emitter arrays
Author :
Hsu, David S.Y. ; Shaw, Jonathan L.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fYear :
2004
fDate :
11-16 July 2004
Firstpage :
218
Lastpage :
219
Abstract :
Multiwalled carbon nanotubes (cNTs) in both the gated cNT-on-Si post and the cNT-in-open configurations were used in this study. Large increases in field emission current were observed when operating cNTs in substantial pressures of hydrogen, especially after the nanotubes have been contaminated with oxygen. Emission degradation was likely due to surface contamination with oxygen and was removed by reaction with hydrogen (atoms). Exposure of the emitters to molecular hydrogen or oxygen when the arrays are not emitting has no effect on the emission produced once the gases are removed, suggesting that the nanotubes are inert to the molecular forms of hydrogen and oxygen and that the atomic forms, which are created by electron dissociation, react with surface groups. The requirement for relatively high pressures of hydrogen also suggests that atomic hydrogen was responsible for the large enhancement and regeneration effects. The ability to regenerate emission from contaminated cNT can prolong emitter device lifetimes and save cost.
Keywords :
carbon nanotubes; field emitter arrays; surface contamination; C; Si; Si post; atomic hydrogen; contaminated carbon nanotubes; electron dissociation; emission degradation; emission regeneration; emitter device lifetime; field emission current; hydrogen pressure; molecular hydrogen; multiwalled carbon nanotubes; oxygen contamination; regenerable integrally gated carbon nanotube field emitter arrays; surface contamination; Anodes; Apertures; Carbon nanotubes; Degradation; Field emitter arrays; Gases; Hydrogen; Robustness; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2004.1354981
Filename :
1354981
Link To Document :
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