Title :
Direct bandgap germanium nanowires inferred from 5.0% uniaxial tensile strain
Author :
Sukhdeo, David S. ; Donguk Nam ; Ju-Hyung Kang ; Petykiewicz, Jan ; Jae Hyung Lee ; Woo Shik Jung ; Vuckovic, Jelena ; Brongersma, Mark L. ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We report uniaxial tensile strains up to 5.0% in lithographically patterned germanium nanowires, which is enough strain to make germanium a direct bandgap semiconductor. Theoretically, this strain can reduce a germanium laser´s threshold by >16,000x.
Keywords :
elemental semiconductors; germanium; internal stresses; nanolithography; nanopatterning; nanowires; semiconductor epitaxial layers; Ge; direct bandgap germanium nanowires; direct bandgap semiconductor; germanium laser threshold; lithographically patterned germanium nanowires; uniaxial tensile strain; Germanium; Nanowires; Photonic band gap; Silicon; Tensile strain; Uniaxial strain; band engineering; germanium; laser materials; silicon photonics; strain;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644432
