Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-κ spacer dielectrics

Author

Southwick, Richard G. ; Sathiyanarayanan, R. ; Bajaj, Mohit ; Mehta, Sharad ; Yamashita, Takayoshi ; Gundapaneni, Suresh ; Pandey, Rajan K. ; Wu, E. ; Murali, Kota V. R. M. ; Cohen, Sholom ; Stathis, J.

Author_Institution

IBM, Albany, NY, USA

fYear

2014

fDate

1-5 June 2014

Abstract

Reduced gate-to-contact thickness is prompting a search for compatible spacer dielectrics with reduced dielectric constants (κ). We compare the reliability of the traditional spacer dielectric, Si₃N₄, with a lower κ material, SiBCN. Weibull slopes and power-law exponent are measured to be close to that of SiO₂. Guidance is given on the minimum SiBCN spacer thickness.

Keywords

Weibull distribution; atomic layer deposition; boron compounds; carbon compounds; leakage currents; low-k dielectric thin films; permittivity; reliability; silicon compounds; tunnelling; Si₃N₄; SiBCN; SiO₂; Weibull slope; atomic-layer-deposited SiBCN reliability; dielectric constant; leakage current; low-κ spacer dielectric; power-law exponent; reduced gate-to-contact thickness; spacer dielectric reliability; tunneling current; Dielectrics; Electric breakdown; Leakage currents; Logic gates; Materials; Reliability; Tunneling; MOS cap; SiBCN; TDDB; reliability; silicon nitride;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6861115

Filename

6861115