Scaling of BTI reliability in presence of time-zero variability

Author

Kukner, Halil ; Weckx, Pieter ; Franco, Jacopo ; Toledano-Luque, Maria ; Moonju Cho ; Kaczer, Ben ; Raghavan, Praveen ; Doyoung Jang ; Miyaguchi, Kenichi ; Bardon, M.G. ; Catthoor, Francky ; Van der Perre, Liesbet ; Lauwereins, Rudy ; Groeseneken, Guido

Author_Institution

Imec, Leuven, Belgium

fYear

2014

fDate

1-5 June 2014

Abstract

In this paper, we first outline the impact of Bias Temperature Instability (BTI) on the transistor threshold voltage as a function of time and the gate oxide field. Subsequently, the correlation between time-zero and time-dependent variability is described. A combined distribution encompassing both contributions with their relative weights is derived. Finally, circuit-level insights on the BTI impact are given based on case study simulations of Ring Oscillators (ROs) at commercial-grade 28nm planar and research-grade 14, 10, 7nm FinFET technology nodes for several FET channel materials (e.g. Si, SiGe, Ge, InGaAs).

Keywords

MOSFET; circuit stability; semiconductor device models; semiconductor device reliability; BTI impact; FET channel materials; FinFET technology; bias temperature instability; circuit-level insights; gate oxide field; ring oscillators; size 10 nm; size 14 nm; size 28 nm; size 7 nm; time-dependent variability; time-zero variability; transistor threshold voltage; Acceleration; Aging; Degradation; FinFETs; Logic gates; Silicon; Stress; Bias Temperature Instability; FET; FinFET; aging; channel material; reliability; scaling; time-zero variability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6861122

Filename

6861122