Title :
High speed silicon modulators on 300 mm SOI wafers
Author :
Marris-Morini, D. ; Baudot, C. ; Rasigade, G. ; Fedeli, J.-M. ; Vulliet, Nathalie ; Souhaite, A. ; Ziebell, Melissa ; Crozat, P. ; Bouville, D. ; Menezo, Sylvie ; Boeuf, F. ; Vivien, L.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
First demonstrations of high speed silicon optical modulators fabricated on 300 mm silicon-on-insulator (SOI) wafers in CMOS foundry are presented. Both ring resonator and Mach Zehnder structures show 10 Gbit/s modulation. Small signal electro-optical bandwidth up to 20 GHz has been achieved, demonstrating the possibility of 40 Gbps data-rate transmission.
Keywords :
CMOS integrated circuits; electro-optical modulation; elemental semiconductors; integrated optics; integrated optoelectronics; optical fabrication; optical resonators; silicon; silicon-on-insulator; CMOS; Mach Zehnder structures; SOI wafers; Si-Si; bit rate 10 Gbit/s; bit rate 40 Gbit/s; data transmission; electro-optical bandwidth; high speed silicon modulators; optical modulation; ring resonator; silicon-on-insulator; size 300 mm; High-speed optical techniques; Optical device fabrication; Optical modulation; Optical ring resonators; Optical variables measurement; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644439
