Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure

Author

Jiechen Wu ; Xiaoxing Lu ; Shenglin Ye ; Jinhee Park ; Streit, Dwight

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of California, Los Angeles, Los Angeles, CA, USA

fYear

2014

fDate

1-5 June 2014

Abstract

We present here a comprehensive electrical characterization and reliability analysis of Al₂O₃/AlGaN/GaN metal insulator semiconductor heterostructure (MISH). MISH capacitors with atomic-layer-deposited Al₂O₃ dielectrics were characterized using capacitance-voltage (C-V), current-voltage (I-V), constant-current stress and time dependent dielectric breakdown (TDDB) measurements. The experimental results show that 1) a mid-level density of interface states exist at the Al₂O₃/AlGaN interface; 2) Poole-Frenkel emission (PFE) and trap-assisted tunneling (TAT) dominate current transport in the medium and high oxide field, respectively; 3) gate voltage drops due to hole trap generation in the oxide under high constant-current stress; 4) a Weibull slope of 2.87 for Al₂O₃ dielectric is extracted from TDDB test.

Keywords

III-V semiconductors; MIS capacitors; Poole-Frenkel effect; aluminium compounds; electric breakdown; electric properties; gallium compounds; semiconductor device reliability; wide band gap semiconductors; Al₂O₃-AlGaN-GaN; MISH capacitors; MISH structure; Poole-Frenkel emission; TDDB; atomic layer deposited dielectrics; capacitance-voltage measurement; constant current stress measurement; current transport; current-voltage measurement; electrical characterization; metal insulator semiconductor heterostructure; reliability analysis; time dependent dielectric breakdown; trap assisted tunneling; Aluminum gallium nitride; Aluminum oxide; Capacitance-voltage characteristics; Dielectrics; Gallium nitride; Logic gates; Reliability; GaN MISH capacitors; dielectric breakdown; interface states and tunneling mechanisms; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6861129

Filename

6861129