Title :
High-voltage double-pulsed measurement system for GaN-based power HEMTs
Author :
Bisi, Davide ; Stocco, Andrea ; Meneghini, Matteo ; Rampazzo, Franco ; Cester, A. ; Meneghesso, Gaudenzio ; Zanoni, Enrico
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padua, Italy
Abstract :
A fully customable high-voltage pulsed system capable of double-pulsed I-V and time-resolved drain-current transient characterization from 1μs- to 100s-range is presented. The system allows a comprehensive characterization of the charge-trapping phenomena affecting the dynamic performances of GaN-based power HEMTs under high-voltage operational biases. We discuss the main issues of a high-voltage pulsed- and transient-characterization, and propose solutions for reliable measurements and data acquisition. Moreover, we demonstrate the effectiveness of the system through the description of a case-study which highlights the importance of high-voltage time-resolved characterization.
Keywords :
III-VI semiconductors; data acquisition; gallium compounds; power HEMT; pulse measurement; semiconductor device measurement; voltage measurement; wide band gap semiconductors; GaN; charge-trapping phenomena; data acquisition; double-pulsed I-V drain-current transient characterization; high-voltage double-pulsed measurement system; high-voltage operational biases; power HEMTs; time 1 mus to 100 s; time-resolved drain-current transient characterization; Current measurement; Gallium nitride; HEMTs; MODFETs; Performance evaluation; Pulse measurements; Transient analysis; Double-Pulse; GaN; High-Voltage; Power HEMTs; Transient;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861130
