Wafer-level fabrication of a triboelectric energy harvester

Author

Mengdi Han ; Bocheng Yu ; Zongming Su ; Bo Meng ; Xiaoliang Cheng ; Xiao-Sheng Zhang ; Haixia Zhang

Author_Institution

Sci. & Technol. on Micro/Nano Fabrication Lab., Peking Univ., Beijing, China

fYear

2015

fDate

18-22 Jan. 2015

Firstpage

1078

Lastpage

1081

Abstract

We present a wafer-level fabrication method for triboelectric energy harvester (TEH), which fabricates the TEH completely in batch fabrication process, without any manually assembly step. Finite element method (FEM) simulation was conducted to investigate the open-circuit potential distribution and short-circuit charge distribution. Experimental measurements show that this device can produce 235 mV peak voltage at the frequency of 30 Hz, under the 100 MΩ external resistance. Compared with previous TEHs, the proposed device can be batch fabricated in CMOS-compatible process and the reduced size allows it to be easily integrated with other electronic devices (e.g., keyboards).

Keywords

CMOS integrated circuits; energy harvesting; finite element analysis; semiconductor technology; triboelectricity; CMOS-compatible process; FEM; TEH; batch fabrication process; electronic devices; external resistance; finite element method simulation; frequency 30 Hz; open-circuit potential distribution; peak voltage; resistance 100 Mohm; short-circuit charge distribution; size reduction; triboelectric energy harvester; voltage 235 mV; wafer-level fabrication method; Electric potential; Electrodes; Fabrication; Gold; Resists; Vibrations;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on

Conference_Location

Estoril

Type

conf

DOI

10.1109/MEMSYS.2015.7051150

Filename

7051150