• DocumentCode
    1876229
  • Title

    Enhanced light emission from Ge micro bridges uniaxially strained beyond 3%

  • Author

    Geiger, Richard ; Suess, M.J. ; Minamisawa, R.A. ; Bonzon, C. ; Schiefler, G. ; Frigerio, Jacopo ; Chrastina, D. ; Isella, Giovanni ; Spolenak, R. ; Faiste, J. ; Sigg, Hans

  • Author_Institution
    Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
  • fYear
    2013
  • fDate
    28-30 Aug. 2013
  • Firstpage
    93
  • Lastpage
    94
  • Abstract
    We present a stressor-free fabrication approach for creating 3.1% uniaxial tensile strain in Ge layers resulting in a 25× increase in PL intensity. 460 cm-1 gain is predicted for aforementioned strain and 1×1019 cm-3 n-doping.
  • Keywords
    elemental semiconductors; germanium; internal stresses; photoluminescence; semiconductor doping; semiconductor epitaxial layers; spectral line intensity; Ge; light emission; n-doping; photoluminescence intensity; stressor-free fabrication; uniaxially strained microbridges; Bridges; Cavity resonators; Optical losses; Optical waveguides; Photonic band gap; Photonics; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
  • Conference_Location
    Seoul
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4673-5803-3
  • Type

    conf

  • DOI
    10.1109/Group4.2013.6644442
  • Filename
    6644442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1876229