Title :
Enhanced light emission from Ge micro bridges uniaxially strained beyond 3%
Author :
Geiger, Richard ; Suess, M.J. ; Minamisawa, R.A. ; Bonzon, C. ; Schiefler, G. ; Frigerio, Jacopo ; Chrastina, D. ; Isella, Giovanni ; Spolenak, R. ; Faiste, J. ; Sigg, Hans
Author_Institution :
Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
Abstract :
We present a stressor-free fabrication approach for creating 3.1% uniaxial tensile strain in Ge layers resulting in a 25× increase in PL intensity. 460 cm-1 gain is predicted for aforementioned strain and 1×1019 cm-3 n-doping.
Keywords :
elemental semiconductors; germanium; internal stresses; photoluminescence; semiconductor doping; semiconductor epitaxial layers; spectral line intensity; Ge; light emission; n-doping; photoluminescence intensity; stressor-free fabrication; uniaxially strained microbridges; Bridges; Cavity resonators; Optical losses; Optical waveguides; Photonic band gap; Photonics; Strain;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644442
