Title :
Tensile-strained germanium microdisks using Si3N4 stressors
Author :
El Kurdi, M. ; Ghrib, A. ; de Kersauson, M. ; Prost, M. ; Sauvage, Sebastien ; Checoury, X. ; Beaudoin, G. ; Sagnes, I. ; Ndong, G. ; Chaigneau, Marc ; Ossikovski, Razvigor ; Boucaud, P.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris Sud 11, Orsay, France
Abstract :
A strong tensile strain (1% biaxial) is applied to germanium microdisks using silicon nitride stressors. Both Fabry-Perot and whispering gallery modes are observed with quality factors up to 1350 limited by free carrier absorption.
Keywords :
Q-factor; elemental semiconductors; germanium; micro-optics; silicon compounds; whispering gallery modes; Fabry-Perot mode; Ge; biaxial strain; free carrier absorption; quality factors; silicon nitride stressors; tensile-strained germanium microdisks; whispering gallery mode; Germanium; Optical device fabrication; Optical imaging; Optical pumping; Physics; Q-factor; Whispering gallery modes;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644443
