DocumentCode :
1876303
Title :
Low temperature surface passivation for carrier injection type SiGe optical modulator
Author :
Younghyun Kim ; Jaehoon Han ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
28-30 Aug. 2013
Firstpage :
99
Lastpage :
100
Abstract :
Surface passivation using Al2O3 deposited at 200 °C is examined to suppress surface recombination for carrier injection SiGe optical modulators. The modulation efficiency is improved by 1.3 by inserting Al2O3 layer prior to SiO2 deposition.
Keywords :
Ge-Si alloys; aluminium compounds; integrated optics; optical modulation; passivation; semiconductor materials; silicon compounds; surface recombination; SiGe-Al2O3-SiO2-Si; carrier injection type SiGe optical modulator; low temperature surface passivation; modulation efficiency; surface recombination suppression; temperature 200 degC; Aluminum oxide; MOS capacitors; Optical modulation; Passivation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
ISSN :
1949-2081
Print_ISBN :
978-1-4673-5803-3
Type :
conf
DOI :
10.1109/Group4.2013.6644445
Filename :
6644445
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1876303
بازگشت