• DocumentCode
    1876348
  • Title

    Pulse poling within 1 second enhance the piezoelectric property of PZT thin films

  • Author

    Kobayashi, T. ; Suzuki, Y. ; Makimoto, N. ; Funakubo, H. ; Maeda, R.

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2015
  • fDate
    18-22 Jan. 2015
  • Firstpage
    1098
  • Lastpage
    1101
  • Abstract
    We have succeeded in enhancing the piezoelectric property of lead zirconate titanate (PZT) thin films by employing “pulse poling” technique. We have fabricated MEMS-based microcantilevers using Pb(Zr0.52,Ti0.48)O3 (MPB-PZT) thin films. By applying 1 kHz and 100 V of unipolar triangle pulse voltage, the transverse piezoelectric constant -d31 of the PZT thin film has been enhanced as high as 105 pm/V, which is larger than the dc-poled PZT thin films (78 pm/V). The -d31 of pulse-poled the PZT thin films measured under the unipolar actuation at 0-12 V reaches 158 pm/V. The results indicate that only 1 second of pulse poling gives better piezoelectric property of the PZT thin films compared to several minutes of dc poling.
  • Keywords
    cantilevers; lead compounds; micromechanical devices; piezoelectric thin films; MEMS-based microcantilevers; MPB-PZT thin films; PZT; dc poling; dc-poled PZT thin films; frequency 1 kHz; lead zirconate titanate thin films; piezoelectric property; pulse poling technique; time 1 s; transverse piezoelectric constant; unipolar triangle pulse voltage; voltage 0 V to 12 V; Electrodes; Microfabrication; Pulse measurements; Silicon; Voltage measurement; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
  • Conference_Location
    Estoril
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2015.7051155
  • Filename
    7051155