Title :
Excess carrier lifetimes in Ge layers on Si
Author :
Geiger, Richard ; Frigerio, Jacopo ; Suess, M.J. ; Minamisawa, R.A. ; Chrastina, D. ; Isella, Giovanni ; Spolenak, R. ; Faist, J. ; Sigg, Hans
Author_Institution :
Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
Abstract :
Electron/hole lifetimes in thermally strained Ge layers on Si are deduced from time-resolved infrared pump-probe transmission spectroscopy. A doping scheme with n-doped Ge on intrinsic Ge yields maximum lifetimes of approximately 3 ns.
Keywords :
carrier lifetime; elemental semiconductors; germanium compounds; infrared spectra; optical materials; semiconductor doping; semiconductor thin films; silicon; Ge-Si; Si; doping scheme; electron lifetimes; excess carrier lifetimes; hole lifetimes; thermally strained germanium layers; time-resolved infrared pump-probe transmission spectroscopy; Annealing; Charge carriers; Delays; Doping; Light sources; Probes; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644447
