Title :
A Universal Parameter for Silicon Anisotropic Etching Inalkaline Solutions
Author :
Cheng, D. ; Gosálvez, M.A. ; Shikida, M. ; Sato, Kiminori ; Sato, K.
Author_Institution :
Department of Micro-Nano Systems Engineering, Nagoya University, Japan
Abstract :
We propose a new explanation for the difference between the etching properties of potassium-hydroxide (KOH) and tetramethyl-ammonium-hydroxide (TMAH) by focusing on the volume fraction occupied by the corresponding cations, K+for KOH and TMA+(with molecular structure N(CH3)4+) for TMAH. We have found experimentally that the differences in the surface morphology of Si
Keywords :
Anisotropic magnetoresistance; Chemical technology; Hydrogen; Micromechanical devices; Rough surfaces; Silicon; Surface morphology; Surface roughness; Systems engineering and theory; Wet etching;
Conference_Titel :
Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
Conference_Location :
Istanbul, Turkey
Print_ISBN :
0-7803-9475-5
DOI :
10.1109/MEMSYS.2006.1627800
