DocumentCode :
187641
Title :
N-contacts degradation analysis of white flip chip LEDs during reliability tests
Author :
Hamon, B. ; Bataillou, B. ; Mendizabal, laurent ; Gasse, A. ; Feuillet, G.
Author_Institution :
Philips Lighting, Miribel, France
fYear :
2014
fDate :
1-5 June 2014
Abstract :
Current and temperature aging have been conducted on flip chip high power light emitting diodes (LEDs) with Al-Ni-Ti-Au n-contacts. Electrical and optical characteristics have been monitored during aging and a forward voltage increase has been observed. In order to understand this behavior, cross sections have been made on representative aged samples. For LEDs with a forward voltage shift, in the n-contact area, Au-Al inter-diffusion leading to a possible formation of Au-Al intermetallic compounds has been observed. We propose here to analyze the failure modes; the related failure mechanism(s) and consequences on LED flip chip reliability.
Keywords :
aluminium alloys; electrical contacts; flip-chip devices; gold alloys; light emitting diodes; nickel alloys; reliability; titanium alloys; Al; Al-Ni-Ti-Au n-contacts; Au; Au-Al inter-diffusion; Au-Al intermetallic compounds; LED flip chip reliability; N-contacts degradation analysis; Ni; Ti; electrical characteristics; failure modes; forward voltage shift; high power light emitting diodes; n-contact area; optical characteristics; related failure mechanism; reliability tests; temperature aging; white flip chip LEDs; Aging; Gold; Light emitting diodes; Reliability; Stress; Temperature measurement; Threshold voltage; LED; contacts; intermetallic; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
Type :
conf
DOI :
10.1109/IRPS.2014.6861140
Filename :
6861140
Link To Document :
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