Non-Destructive Strength Characterization of Full-Wafer Bonds Using a Modified Blister Test Method

This paper presents a novel test method for a non-destructive strength characterization of bonded silicon wafer pairs. The test is based on a controlled crack generation at the bond interface using a modified blister test method. An analytical model was used to establish an essential design parameter. Therewith, different test structures were analyzed and important information about crack generation and crack propagation were gained. Finally, the theory of controlled crack generation was verified and demonstrated by a modified blister test.