Title :
All-monolithic InAlGaAs/InP VCSELs for 1.3 ∼ 1.5 μm wavelength ranges
Author :
Park, Mi-Ran ; Kwon, O-Kyun ; Han, Won-Seok ; Kim, Jong-Hee ; Park, Sadg-Hee Ko ; Song, Hyun-Woo ; Lee, Ki-Hwang ; Park, Seong-Joo ; Yoo, B.S.
Author_Institution :
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
All-monolithic InAlGaAs/InP VCSELs over 1.3∼1.5 μm wavebands were successfully demonstrated. A single mode power of ∼1 mW and modulation bandwidth exceeding 2.5 Gbps at room temperature and CW operation over 80°C were obtained in both 1.3 and 1.5 μm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; surface emitting lasers; 1 mW; 1.3 to 1.5 micron; 2.5 Gbit/s; 80 degC; CW operation; FWHM divergence angle; InAlGaAs-InP; SMSR; all-monolithic VCSEL; modulation bandwidth; optical fiber communication systems; single mode power; vertical cavity surface emitting lasers; Apertures; Fiber lasers; Indium phosphide; Laser modes; MOCVD; Optical surface waves; Power generation; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC
Print_ISBN :
1-55752-783-0
DOI :
10.1109/OFC.2005.192972
