Title :
Pulsed laser deposition of lanthanum sulfide thin films on silicon and indium phosphide substrates: growth, characterization, and field emission properties
Author :
Cahay, M. ; Garre, K. ; Draviam, P. ; Boolchand, P. ; Fairchild, S. ; Jones, J. ; Wu, X. ; Poitras, D. ; Lockwood, D.J. ; Semet, V. ; Binh, Vu Thien
Author_Institution :
Dept. of Electron. Comput. Eng. & Comput. Sci., Cincinnati Univ., OH, USA
Abstract :
The growth, characterization, and field emission properties of pulsed laser deposition of lanthanum sulfide thin films on silicon and indium phosphide substrates were studied. X-ray diffraction analysis of fairly thick films (micrometer size) reveals the successful growth of the cubic rocksalt structure with a lattice constant of 5.863(7) angstroms, which is close to the bulk value. High resolution transmission electron microscope images of the films reveal that they are comprised of nanocrystals separated by regions of amorphous materials. Raman spectra and ellipsometry measurements were also performed. It was found that the work function deduced from Fowler-Nordheim plots at room temperature has a mean value of 0.65 eV. Also, a strong dependence of the field emission current with temperature was observed.
Keywords :
Raman spectra; X-ray diffraction; ellipsometry; field emission; lanthanum compounds; lattice constants; pulsed laser deposition; thin films; transmission electron microscopy; work function; Fowler-Nordheim plots; LaS; Raman spectra; X-ray diffraction; amorphous materials; cubic rocksalt structure; ellipsometry measurements; field emission current; lattice constant; nanocrystals; pulsed laser deposition; room temperature; thin film characterization; thin film field emission properties; thin film growth; transmission electron microscope; work function; Indium phosphide; Lanthanum; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Silicon; Sputtering; X-ray diffraction; X-ray imaging; X-ray lasers;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1355008
