• DocumentCode
    1876664
  • Title

    Phase matching of degenerate four wave mixing in silicon-chalcogenide slot waveguides

  • Author

    Nolte, Peter W. ; Bohley, Christian ; Schilling, Joerg

  • Author_Institution
    Centre for Innovation Competence SiLi-nano, Martin-Luther-Univ. Halle-Wittenberg, Halle, Germany
  • fYear
    2013
  • fDate
    28-30 Aug. 2013
  • Firstpage
    122
  • Lastpage
    123
  • Abstract
    We present a novel design route for silicon/chalcogenide hybrid slot waveguides, which allows waveguide geometries with FOM > 1, a maximum field concentration within the infiltrated material and a vanishing group velocity dispersion (GVD) at the same time [1]. The independent adjustment of the GVD and the mode profile is achieved by a small periodic variation of the refractive index along the waveguide. This introduces a photonic band gap for the waveguide mode leading to additional band bending in the vicinity of the band gap. With the presented scheme the phase matching condition can be fulfilled independently from the wave guide cross section. The GVD = 0 condition can be easily tuned to the wavelength of interest allowing a flexible design of the hybrid photonic components.
  • Keywords
    arsenic compounds; chalcogenide glasses; elemental semiconductors; multiwave mixing; optical design techniques; optical dispersion; optical glass; optical phase matching; optical waveguides; photonic band gap; refractive index; silicon; GVD; Si-As2S3; band bending; degenerate four wave mixing; field concentration; group velocity dispersion; hybrid photonic components; mode profile; phase matching; photonic band gap; refractive index; silicon-chalcogenide hybrid slot waveguides; waveguide cross section; waveguide geometries; waveguide mode; Dispersion; Optical mixing; Optical refraction; Optical waveguides; Optimized production technology; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
  • Conference_Location
    Seoul
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4673-5803-3
  • Type

    conf

  • DOI
    10.1109/Group4.2013.6644459
  • Filename
    6644459