DocumentCode
1876683
Title
Recent implementations of Class-E power amplifiers
Author
Rajaie, Ahmed ; Khorshid, Ahmed ; Darwish, Ali
Author_Institution
Electron. Eng., American Univ. in Cairo, Cairo, Egypt
fYear
2012
fDate
6-9 March 2012
Firstpage
26
Lastpage
30
Abstract
This survey paper addresses the progress in class-E power amplifiers during the last decade, from 2000 - Present. Over 200 papers are analyzed in this survey. Both wide bandgap (e.g. SiC and GaN) and narrower bandgap (e.g. GaAs, and Si) devices are considered. A comparison was done in terms of maximum output power, efficiency and operating frequency achieved. Highest performing Class-E power amplifiers are reported.
Keywords
power amplifiers; wide band gap semiconductors; class-E power amplifier; maximum output power; narrower bandgap device; operating frequency; wide bandgap device; Conferences; DH-HEMTs; Decision support systems; Handheld computers; Class-E; high efficiency; output power; power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Communications and Computers (JEC-ECC), 2012 Japan-Egypt Conference on
Conference_Location
Alexandria
Print_ISBN
978-1-4673-0485-6
Type
conf
DOI
10.1109/JEC-ECC.2012.6186951
Filename
6186951
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