Title :
Design and development of Generation-I silicon based Solid State Transformer
Author :
Bhattacharya, Subhashish ; Zhao, Tiefu ; Wang, Gangyao ; Dutta, Sumit ; Baek, Seunghun ; Du, Yu ; Parkhideh, Babak ; Zhou, Xiaohu ; Huang, Alex Q.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The Solid State Transformer (SST) is one of the key elements proposed in the National Science Foundation (NSF) Generation-III Engineering Research Center (ERC) ¿Future Renewable Electric Energy Delivery and Management¿ (FREEDM) Systems Center. The SST is used to enable active management of distributed renewable energy resources, energy storage devices and loads. In this paper, the Generation-I SST single-phase 20 kVA, based on 6.5 kV Si-IGBT is proposed for interface with 12 kV distribution system voltage. The SST system design parameters, overall system efficiency, high frequency transformer design, dual active bridge converter, auxiliary power supply and gate drives are investigated. Design considerations and experimental results of the prototype SST are reported.
Keywords :
insulated gate bipolar transistors; power convertors; power transformers; silicon; FREEDM system; National Science Foundation; Si; Si-IGBT; auxiliary power supply; distribution system voltage; dual active bridge converter; future renewable electric energy delivery and management; generation-I silicon based transformer; solid state transformer; voltage 12 kV; voltage 6.5 kV; Bridge circuits; Energy management; Energy storage; Engineering management; Frequency conversion; Power engineering and energy; Renewable energy resources; Resource management; Silicon; Solid state circuits; FREEDM system; Solid state transformer;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
Conference_Location :
Palm Springs, CA
Print_ISBN :
978-1-4244-4782-4
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2010.5433455
