Title :
Epitaxial growth technology for optical interconnect based on bulk-Si platform
Author :
JoongHan Shin ; BongJin Kuh ; JongSung Lim ; BeomSeok Kim ; EunHa Lee ; Dongjae Shin ; Kwansik Cho ; BeomSuk Lee ; Kyoungho Ha ; HanMei Choi ; Gil-Heyun Choi ; HoKyu Kang ; EunSeung Jung
Author_Institution :
Semicond. R&D Div., Samsung Electron. Co., Ltd., Hwasung, South Korea
Abstract :
This study reports two types of Si epitaxial growth techniques, SPE and LEG, used for bulk-Si based optical interconnect. Experiments show that the LEG technology enhances both crystalline quality and epitaxial growth length.
Keywords :
elemental semiconductors; liquid phase epitaxial growth; optical interconnections; silicon; solid phase epitaxial growth; LEG technology; SPE technology; Si; bulk-Si platform; crystalline quality; epitaxial growth length; liquid phase epitaxy; optical interconnect; solid phase epitaxy; Couplers; Epitaxial growth; Optical fibers; Optical interconnections; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644461
