DocumentCode :
187695
Title :
Using thermal cycle and temperature / voltage testing to reduce the incidence of resistive / open reliability defects
Author :
Swift, Ann
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
fYear :
2014
fDate :
1-5 June 2014
Abstract :
Continued scaling of CMOS technologies has challenged the capability of “traditional” reliability defect screens. The increases in power due to scaling has diminished the effectiveness and increased the cost of performing accelerated voltage based screens such as Burn-in. In addition, the smaller geometries in the Back End Of Line (BEOL) has meant more susceptibility to opens/resistive mechanisms which have not been screened well by “traditional” voltage based screens. Through experimentation, it was determined that the use of thermal cycle and temperature/voltage corner testing significantly diminished the magnitude of opens/resistive mechanisms and also afforded some screening of “traditional” “shorting” mechanisms.
Keywords :
CMOS integrated circuits; crystal defects; integrated circuit reliability; integrated circuit testing; BEOL; CMOS technologies; accelerated voltage based screens; back end of line; opens-resistive mechanisms; reliability defect screens; temperature-voltage corner testing; thermal cycle; traditional shorting mechanisms; Acceleration; Mathematical model; Reliability; Stress; Testing; Thermal resistance; Thermal stresses; defect screening; reliablity; thermal cycle;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
Type :
conf
DOI :
10.1109/IRPS.2014.6861169
Filename :
6861169
Link To Document :
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