A K band DRO in coplanar layout with dry and wet etched InP HEMTs

Author

Duran, H.C. ; Lott, U. ; Benedickter, H. ; Bachtold, W.

Author_Institution

Lab. for Electromagnetic Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

861

Abstract

A DRO operating in the frequency range of 23.2-24.8 GHz was designed using InGaAs-InAlAs-InP HEMTs with dry and wet etched gate recess. The oscillator consisted of an MMIC in coplanar waveguide technology and an externally coupled mechanically tunable DR mounted on a microstrip line. An output power of 12 dBm and a phase noise of -107 dBc/Hz at 100 kHz offset from the carrier were measured. The achieved power efficiency was 21%.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC oscillators; circuit tuning; coplanar waveguides; dielectric resonator oscillators; etching; field effect MMIC; indium compounds; phase noise; 21 percent; 23.2 to 24.8 GHz; CPW technology; InGaAs-InAlAs-InP; InP HEMTs; K-band DRO; MMIC; SHF oscillator; coplanar layout; coplanar waveguide technology; dry etched gate recess; externally coupled DR; mechanically tunable DR; microstrip line mounted DR; wet etched gate recess; Coplanar waveguides; Dry etching; Frequency; HEMTs; Indium phosphide; MMICs; MODFETs; Microstrip; Oscillators; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705126

Filename

705126