Impact of body bias on soft error tolerance of bulk and Silicon on Thin BOX structure in 65-nm process

We analyze the soft error tolerance of DFF in 65-nm bulk and SOTB (Silicon on Thin BOX) process by alpha and neutron experiments and device-simulations. The experimental results reveal that by increasing the reverse body bias the soft error rate in the bulk structure is increased, while the number of soft errors in SOTB structure is decreased. The results from device-simulation show that the collected charge of bulk structure is increased, while the collected charge is decreased in SOTB as the reverse body bias increases.