• DocumentCode
    1877068
  • Title

    Simulation study of parameter influence on Dynamic Voltage Rise Control

  • Author

    Li, Ming ; Fang, Xiong ; Wang, Yue ; Zhang, Leqiang ; Wang, Ke ; Zhao, Guopeng

  • Author_Institution
    Sch. of Electr. Eng., Xi´´an Jiaotong Univ., Xi´´an, China
  • fYear
    2010
  • fDate
    21-25 Feb. 2010
  • Firstpage
    1745
  • Lastpage
    1748
  • Abstract
    High power IGBTs are widely used in wind power generation systems. An advanced IGBT gate driver with Dynamic Voltage Rise Control (DVRC) is used to suppress the turn-off over-voltage of the IGBT. Mass simulations are done to evaluate the performance, showing influence of the DVRC parameters, in order to select the right parameters for applications.
  • Keywords
    insulated gate bipolar transistors; power convertors; short-circuit currents; voltage control; DVRC; IGBT gate driver; dynamic voltage rise control; high power IGBT converter; short-circuit; turn-off over-voltage; wind power generation systems; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
  • Conference_Location
    Palm Springs, CA
  • ISSN
    1048-2334
  • Print_ISBN
    978-1-4244-4782-4
  • Electronic_ISBN
    1048-2334
  • Type

    conf

  • DOI
    10.1109/APEC.2010.5433469
  • Filename
    5433469
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1877068