• DocumentCode
    1877077
  • Title

    Development of a novel HEMT-based plasmonic sensor

  • Author

    Meierbachtol, C.S. ; Brown, T.D. ; Chahal, P. ; Shanker, B.

  • Author_Institution
    Dept. of Electr. & Comput., Michigan State Univ., East Lansing, MI, USA
  • fYear
    2010
  • fDate
    11-17 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we develop a method for analyzing such a device. This implies that one must solve a multi-physics problem, one that is governed by a coupled SchrδdingerPoisson equation and is weakly perturbed by an incident electric field. This article is organized in the following manner. The next section describes all necessary physical parameters of the simulated system. Section 3 outlines the mathematical background, formulas used, and provides an outline of the self-consistent simulation routine. Finally, the results of the simulation and their importance are discussed in Section 4, along with a brief summary in Section 5.
  • Keywords
    high electron mobility transistors; sensors; surface plasmons; coupled Schrodinger-Poisson equation; high electron mobility transistors; plasmonic sensor; Electric potential; Electrostatics; Equations; HEMTs; MODFETs; Mathematical model; Permittivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE
  • Conference_Location
    Toronto, ON
  • ISSN
    1522-3965
  • Print_ISBN
    978-1-4244-4967-5
  • Type

    conf

  • DOI
    10.1109/APS.2010.5561238
  • Filename
    5561238