Title :
Development of a novel HEMT-based plasmonic sensor
Author :
Meierbachtol, C.S. ; Brown, T.D. ; Chahal, P. ; Shanker, B.
Author_Institution :
Dept. of Electr. & Comput., Michigan State Univ., East Lansing, MI, USA
Abstract :
In this paper, we develop a method for analyzing such a device. This implies that one must solve a multi-physics problem, one that is governed by a coupled SchrδdingerPoisson equation and is weakly perturbed by an incident electric field. This article is organized in the following manner. The next section describes all necessary physical parameters of the simulated system. Section 3 outlines the mathematical background, formulas used, and provides an outline of the self-consistent simulation routine. Finally, the results of the simulation and their importance are discussed in Section 4, along with a brief summary in Section 5.
Keywords :
high electron mobility transistors; sensors; surface plasmons; coupled Schrodinger-Poisson equation; high electron mobility transistors; plasmonic sensor; Electric potential; Electrostatics; Equations; HEMTs; MODFETs; Mathematical model; Permittivity;
Conference_Titel :
Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4244-4967-5
DOI :
10.1109/APS.2010.5561238
