DocumentCode
1877077
Title
Development of a novel HEMT-based plasmonic sensor
Author
Meierbachtol, C.S. ; Brown, T.D. ; Chahal, P. ; Shanker, B.
Author_Institution
Dept. of Electr. & Comput., Michigan State Univ., East Lansing, MI, USA
fYear
2010
fDate
11-17 July 2010
Firstpage
1
Lastpage
4
Abstract
In this paper, we develop a method for analyzing such a device. This implies that one must solve a multi-physics problem, one that is governed by a coupled SchrδdingerPoisson equation and is weakly perturbed by an incident electric field. This article is organized in the following manner. The next section describes all necessary physical parameters of the simulated system. Section 3 outlines the mathematical background, formulas used, and provides an outline of the self-consistent simulation routine. Finally, the results of the simulation and their importance are discussed in Section 4, along with a brief summary in Section 5.
Keywords
high electron mobility transistors; sensors; surface plasmons; coupled Schrodinger-Poisson equation; high electron mobility transistors; plasmonic sensor; Electric potential; Electrostatics; Equations; HEMTs; MODFETs; Mathematical model; Permittivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE
Conference_Location
Toronto, ON
ISSN
1522-3965
Print_ISBN
978-1-4244-4967-5
Type
conf
DOI
10.1109/APS.2010.5561238
Filename
5561238
Link To Document