Temperature dependence of lasing characteristics for 1.3 /spl mu/m GaAs-based quantum dot lasers

Summary form only given. Recently ground-state 1.3 /spl mu/m wavelength lasing has been demonstrated at room temperature from GaAs-based uncoated heterostructure lasers using an InGaAs quantum dot (QD) active region. Despite low threshold current density at 77 K, lasing at the higher temperatures shows a a rapid increase in threshold occurring above 200 K. In this talk we present data characterizing the QD laser´s threshold temperature dependence, and show that it comes mainly from nonradiative recombination from the QD higher energy levels and wetting layer. The results suggest that very low threshold current density can be obtained at room temperature once nonradiative recombination is eliminated.