DocumentCode
187713
Title
SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts
Author
Gasiot, Gilles ; Soussan, Dimitri ; Glorieux, M. ; Bottoni, C. ; Roche, Philippe
Author_Institution
Design Enablement Service, STMicroelectron., Crolles, France
fYear
2014
fDate
1-5 June 2014
Abstract
This work presents alpha and neutron SER characterizations of a 28nm commercial Fully-Depleted SOI technology predisposed to consumer applications. Its intrinsic SER hardness is as well compared to known highly reliable Partially-Depleted SOI technologies.
Keywords
SRAM chips; neutron effects; radiation hardening (electronics); silicon-on-insulator; BULK; PDSOI; SER-SEL performances; SRAMs; UTBB FDSOI; alpha SER characterizations; fully-depleted SOI technology; intrinsic SER hardness; neutron SER characterizations; reliable partially-depleted SOI technology; ultra-thin body and BOX; CMOS integrated circuits; Neutrons; Random access memory; Reliability; Silicon; Silicon-on-insulator; Transistors; Fully Depleted SOI; SER; Soft Error Rate; UTBB;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2014 IEEE International
Conference_Location
Waikoloa, HI
Type
conf
DOI
10.1109/IRPS.2014.6861178
Filename
6861178
Link To Document