• DocumentCode
    1877172
  • Title

    Crystallization of patterned amorphous si and ge thin films for 3D integrated optoelectronics

  • Author

    Hui Zhong ; Abu-Safe, Husam ; Hickerson, Alan ; Conley, Benjamin R. ; Naseem, Hameed ; Shui-Qing Yu

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
  • fYear
    2013
  • fDate
    28-30 Aug. 2013
  • Firstpage
    53
  • Lastpage
    54
  • Abstract
    Selective area patterning and crystallizing a-Si and a-Ge films have resulted in single crystal films which can potentially work as micro templates on arbitrary substrates for subsequent epitaxy growth.
  • Keywords
    amorphous semiconductors; crystallisation; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; optical films; optical materials; semiconductor thin films; silicon; 3D integrated optoelectronics; Ge; Si; crystallization; epitaxial growth; microtemplates; patterned amorphous thin films; selective area patterning; single crystal films; Crystallization; Epitaxial growth; Photonics; Silicon; Substrates; amorphous semiconductors; crystallography; integrated optoelectronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
  • Conference_Location
    Seoul
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4673-5803-3
  • Type

    conf

  • DOI
    10.1109/Group4.2013.6644478
  • Filename
    6644478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1877172