Title :
Frequency dependence of NBTI in high-k/metal-gate technology
Author :
Hsieh, Min-Hsiu ; Maji, D. ; Huang, Yi-Chun ; Yew, T.-Y. ; Wang, W. ; Lee, Young-Hyun ; Shih, J.R. ; Wu, Kaijie
Author_Institution :
TQRD, Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
Abstract :
In this paper, frequency dependency of the Negative Bias Temperature Instability (NBTI) in a wide frequency range (10kHz ~ 500MHz) is investigated using on-chip test structure. The designed test structure allows measurement in AC and DC mode. Statistically meaningful AC/DC lifetime ratios are extracted after accelerated reliability stress and show a non-monotonic behavior. Random Telegraph Noise (RTN) trap analysis of a single defect is also carried out which reveals that trap located near interface with time constant 10-10~10-4s are responsible for such behavior. A model from trap occupancy of individual defects point of view is also proposed to justify with plausible reasons the non-monotonic behavior of AC/DC ratio in wide frequency range.
Keywords :
high-k dielectric thin films; negative bias temperature instability; random noise; reliability; AC-DC lifetime ratios; NBTI; RTN trap analysis; frequency 10 kHz to 500 MHz; frequency dependency; high-k-metal-gate technology; negative bias temperature instability; nonmonotonic behavior; on-chip test structure; random telegraph noise; reliability stress; trap occupancy; Arrays; FinFETs; Frequency dependence; Logic gates; Noise; Stress; System-on-chip; High-K; Negative Bias Temperature Instability; Random Telegraph Noise; Reliability;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861181
