Title :
First-principles study of light emission from strained germanium
Author_Institution :
Photonics Electron. Technol. Res. Assoc., Kokubunji, Japan
Abstract :
Light emissions due to direct transitions in strained germanium with electron doping are studied based on first principles calculations. We found that an accuracy of the band structure is a key to improve reproducibility of experimental measurements. Combinations of carrier density, strain, and temperature necessary for lazing are discussed based on these calculations. We also found that measuring temperature dependence of spontaneous emission helps estimation whether electron injection is sufficient or not.
Keywords :
ab initio calculations; band structure; carrier density; elemental semiconductors; germanium; light sources; semiconductor doping; spontaneous emission; thermo-optical effects; Ge; band structure; carrier density; electron doping; electron injection; first principles calculations; light emission; spontaneous emission; strain dependence; strained germanium; temperature dependence; Charge carrier density; Electron optics; Germanium; Optical device fabrication; Spontaneous emission; Strain; Temperature measurement;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644481