First-principles study of light emission from strained germanium

Author

Suwa, Yuji

Author_Institution

Photonics Electron. Technol. Res. Assoc., Kokubunji, Japan

fYear

2013

fDate

28-30 Aug. 2013

Firstpage

37

Lastpage

38

Abstract

Light emissions due to direct transitions in strained germanium with electron doping are studied based on first principles calculations. We found that an accuracy of the band structure is a key to improve reproducibility of experimental measurements. Combinations of carrier density, strain, and temperature necessary for lazing are discussed based on these calculations. We also found that measuring temperature dependence of spontaneous emission helps estimation whether electron injection is sufficient or not.

Keywords

ab initio calculations; band structure; carrier density; elemental semiconductors; germanium; light sources; semiconductor doping; spontaneous emission; thermo-optical effects; Ge; band structure; carrier density; electron doping; electron injection; first principles calculations; light emission; spontaneous emission; strain dependence; strained germanium; temperature dependence; Charge carrier density; Electron optics; Germanium; Optical device fabrication; Spontaneous emission; Strain; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2013 IEEE 10th International Conference on

Conference_Location

Seoul

ISSN

1949-2081

Print_ISBN

978-1-4673-5803-3

Type

conf

DOI

10.1109/Group4.2013.6644481

Filename

6644481