Optimization for electro-optic modulation efficiency of silicon-oninsulator waveguide devices with an adjustable pn-junction

Author

DeGui Sun ; Peng Liu ; Hall, Trevor J.

Author_Institution

Centre for Res. in Photonics, Univ. of Ottawa, Ottawa, ON, Canada

fYear

2013

fDate

28-30 Aug. 2013

Firstpage

45

Lastpage

46

Abstract

For the free-carrier dispersion effect based silicon-on-insulator high-speed electro-optic devices, the critic tension between the effective refractive index modulation and the space is analyzed and the modulation efficiency is optimized with an adjustable pn-junction.

Keywords

electro-optical modulation; integrated optoelectronics; optical dispersion; optical waveguides; p-n junctions; refractive index; silicon-on-insulator; Si; adjustable pn-junction; critic tension; electro-optic modulation efficiency; free-carrier dispersion; optimization; refractive index modulation; silicon-on-insulator high-speed electro-optic devices; silicon-on-insulator waveguide devices; Electrooptical waveguides; Optical modulation; Optical refraction; Optical variables control; Refractive index; Thyristors; Free-carrier dispersion effect; adjustable pn-junction; effective refractive index modulation; silicon-on-insulator waveguide; space charge region;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2013 IEEE 10th International Conference on

Conference_Location

Seoul

ISSN

1949-2081

Print_ISBN

978-1-4673-5803-3

Type

conf

DOI

10.1109/Group4.2013.6644485

Filename

6644485