Title :
Holographic vertical-cavity surface-emitting laser
Author :
Kwolek, K.M. ; Nolte, D.D. ; Lenox, C. ; Streetman, B.
Author_Institution :
Dept. of Phys., Purdue Univ., West Lafayette, IN, USA
Abstract :
Summary form only given. We present holographic diffraction from a broad-area thin-film holographic laser. The holographic laser is similar to a vertical-cavity surface-emitting laser (VCSEL) and consists of a 1 /spl mu/m thick GaAs active layer sandwiched between two 61.6 nm Al/sub 0.1/Ga/sub 0.9/As-AlAs 72.8 nm Bragg stacks, centered at 870 nm, with top and bottom periods of 5 and 10, respectively. No post-growth processing or fabrication is required.
Keywords :
III-V semiconductors; gallium arsenide; holographic gratings; laser transitions; optical films; semiconductor lasers; surface emitting lasers; 870 nm; Al/sub 0.1/Ga/sub 0.9/As-AlAs; Al/sub 0.1/Ga/sub 0.9/As/AlAs Bragg stacks; GaAs; GaAs active layer; VCSEL; broad-area thin-film holographic laser; holographic diffraction; holographic gratings; holographic vertical-cavity surface-emitting laser; vertical-cavity surface-emitting laser; Diffraction; Holography; Laser beams; Laser excitation; Laser feedback; Laser theory; Laser tuning; Probes; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834570
