Title :
Formation of arsenic segregated Ytterbium and Nickel silicide using microwave annealing
Author :
Ming-Kun Huang ; Wen-Fa Wu ; Chun-Hsing Shih ; Shen-Li Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Chi Nan Univ., Nantou, Taiwan
Abstract :
This work investigates the formation of arsenic segregated Ytterbium and Nickel silicide using low-temperature microwave annealing. Two types of dopant segregation approaches, implant-before-silicidation and implantation-through-metal, are performed to examine the electrical properties of the microwave annealed silicide. Results of current-voltage curves and dopant distribution profiles are compared with those using rapid thermal annealing.
Keywords :
annealing; arsenic; doping profiles; electrical conductivity; microwave materials processing; nickel compounds; segregation; ytterbium compounds; NiSi:As; YbSi2:As; arsenic segregated nickel silicide formation; arsenic segregated ytterbium silicide formation; current-voltage curves; dopant segregation; electrical properties; implant-before-silicidation; implantation-through-metal; low-temperature microwave annealing; Junctions; Nickel alloys; Rapid thermal annealing; Schottky barriers; Silicides; Silicon;
Conference_Titel :
Junction Technology (IWJT), 2013 13th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0578-2
DOI :
10.1109/IWJT.2013.6644499
