Characterization of ion implanted silicon using UV Raman and multiwavelength photoluminescence for in-line dopant activation monitoring

Author

Woo Sik Yoo ; Ishigaki, Toshikazu ; Ueda, Toshitsugu ; Kang, Kary ; Hasuike, Noriyuki ; Harima, Hiroshi ; Yoshimoto, Masahiko

Author_Institution

WaferMasters, Inc., San Jose, CA, USA

fYear

2013

fDate

6-7 June 2013

Firstpage

41

Lastpage

44

Abstract

Ultra-violet (UV) Raman and multiwavelength photoluminescence (PL) characterization techniques are examined as potential in-line, non-contact dopant activation and diffusion process monitoring techniques for ion implanted silicon in implant activation process steps. Excellent correlations among sheet resistance (Rs), B depth profiles, UV Raman and multiwavelength PL characterization results were achieved. The UV Raman and multiwavelength PL technologies can be used as promising non-contact dopant activation and diffusion process monitoring techniques.

Keywords

Raman spectra; boron; diffusion; doping profiles; electrical resistivity; elemental semiconductors; ion implantation; photoluminescence; silicon; ultraviolet spectra; Si:B; UV Raman spectroscopy; depth profiles; diffusion process monitoring techniques; implant activation process steps; in-line dopant activation monitoring; ion implanted silicon; multiwavelength photoluminescence; noncontact dopant activation; sheet resistance; Annealing; Junctions; Measurement by laser beam; Resistance; Silicon; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2013 13th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0578-2

Type

conf

DOI

10.1109/IWJT.2013.6644502

Filename

6644502