Title :
Gain-switched laser performance of diffusion-doped Cr/sup 2+/:ZnSe
Author :
Podlipensky, A.V. ; Shcherbitsky, V.G. ; Kuleshov, N.V. ; Mikhailov, V.P. ; Levchenko, V.I. ; Yakimovich, V.N.
Author_Institution :
Byelorussian State Polytech. Acad., Minsk, Byelorussia
Abstract :
Summary form only given. The present article is dedicated to an investigation of laser performance of Cr/sup 2+/:ZnSe crystals produced by the diffusion doping method. The advantages of this method are high quality of the host crystals and the ability to control impurity doping level by adjustment of the diffusion time and temperature. A slope efficiency as high as 30% and laser threshold as low as 14 /spl mu/J with respect to absorbed pump energy are achieved for the best samples for which the round trip passive loss is estimated to be approximately 12%.
Keywords :
chromium; diffusion; optical losses; optical pumping; semiconductor doping; semiconductor lasers; zinc compounds; 14 muJ; 30 percent; ZnSe:Cr; absorbed pump energy; diffusion doping method; diffusion temperature; diffusion time; diffusion-doped Cr/sup 2+/:ZnSe; gain-switched laser performance; impurity doping level control; laser threshold; round trip passive loss; slope efficiency; Absorption; Chromium; Crystals; Impurities; Laser excitation; Laser tuning; Optical materials; Pump lasers; Semiconductor lasers; Zinc compounds;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834581
