Title :
Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution
Author :
Akihiro, Ikeda ; Nishi, Kentaro ; Marui, Daichi ; Ikenoue, Hiroshi ; Asano, Takashi
Author_Institution :
Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
Abstract :
In this report, we extend our investigation to characterization of junctions produced by the excimer laser irradiation to 4H-SiC immersed in phosphoric acid.
Keywords :
excimer lasers; laser materials processing; liquid phase epitaxial growth; p-n junctions; semiconductor epitaxial layers; semiconductor growth; silicon compounds; wide band gap semiconductors; 4H-SiC; SiC; excimer laser irradiation; excimer-laser processing; p-n junction; phosphoric acid solution; Doping; Epitaxial layers; Junctions; Radiation effects; Semiconductor lasers; Silicon carbide;
Conference_Titel :
Junction Technology (IWJT), 2013 13th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0578-2
DOI :
10.1109/IWJT.2013.6644506
