DocumentCode
1878046
Title
A 1.8 V-to-2.5 V MIPI RFFE slave interface CMOS circuit
Author
Seunghyun Jang ; Namsik Ryu ; Hui Dong Lee ; Bonghyuk Park
Author_Institution
ETRI (Electron. & Telecommun. Res. Inst.), Daejeon, South Korea
fYear
2015
fDate
1-3 July 2015
Firstpage
560
Lastpage
563
Abstract
The MIPI RFFE slave interface circuit including Power-on-Reset (PoR), SCLK receiver and SDATA bidirectional transceiver has been implemented with a CMOS 250 nm process. Simulation results show that the designed circuit has SDATA output transition time (for rise and fall) of shorter than 3.3 ns at a full-speed rate of 26 MHz, which satisfies the timing requirement (<; 6.5 ns) by the specification of MIPI RFFE version 1.10. The target load capacitance that the designed MIPI RFFE slave interface circuit drives is 26 pF for the configuration of one master and eight slaves.
Keywords
CMOS integrated circuits; UHF integrated circuits; field effect MMIC; mobile handsets; radio transceivers; CMOS circuit; MIPI RFFE slave interface; MIPI RFFE version 1.10; MIPI alliance specification; RF front end control interface; SCLK receiver; SDATA bidirectional transceiver; SDATA output transition time; load capacitance; power-on-reset; size 250 nm; voltage 1.8 V to 2.5 V; Bidirectional control; CMOS integrated circuits; Long Term Evolution; Radio frequency; Receivers; Transceivers; CMOS; MIPI; PoR; RFFE; SCLK; SDATA; driver; master; slave;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Communication Technology (ICACT), 2015 17th International Conference on
Conference_Location
Seoul
Print_ISBN
978-8-9968-6504-9
Type
conf
DOI
10.1109/ICACT.2015.7224858
Filename
7224858
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