• DocumentCode
    1878178
  • Title

    Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

  • Author

    Current, Michael I. ; Yao-Jen Lee ; Yu-Lun Lu ; Ta-Chun Cho ; Tien-Sheng Chao ; Onoda, Hiroshi ; Sekar, K. ; Tokoro, Nobuhiro

  • Author_Institution
    Current Sci., San Jose, CA, USA
  • fYear
    2013
  • fDate
    6-7 June 2013
  • Firstpage
    84
  • Lastpage
    87
  • Abstract
    Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.
  • Keywords
    elemental semiconductors; ion implantation; microwave materials processing; organic compounds; phosphorus; rapid thermal annealing; silicon; C7 implanted strained nMOS S/D type junctions; RTA annealing; Si:P; microwave annealing; molecular carbon ions; phos-doped strained Si(100); phos-doped strained Si(110); rapid-thermal annealing; temperature 500 C; temperature 600 C to 1000 C; Annealing; Carbon; Implants; Ions; Junctions; Microwave transistors; Silicon; cluster carbon; microwave anneal; molecular carbon; phosphorous doping;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2013 13th International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-0578-2
  • Type

    conf

  • DOI
    10.1109/IWJT.2013.6644511
  • Filename
    6644511
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1878178