Title :
A 34.8 GHz 1/4 static frequency divider using AlGaAs/GaAs HBTs
Author :
Yamauchi, Yoshiki ; Nakajima, Osaake ; Nagata, Koichi ; Ito, Hiroshi ; Ishibashi, Tadao
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
A one-by-four static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was designed to operate at a bias condition that gave a maximum cutoff frequency f/sub T/ and a maximum oscillation frequency f/sub max/. The f/sub T/ and f/sub max/ applied to the divider were 68 GHz and 56 GHz, respectively. The circuit operated up to 34.8 GHz at a power supply voltage of 9 V and power dissipation of 495 mW. A low minimum input signal power level of 0 dBm was also achieved.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; counting circuits; frequency dividers; gallium arsenide; 34.8 to 68 GHz; 495 mW; 9 V; AlGaAs-GaAs; HBTs; bias condition; cutoff frequency; heterojunction bipolar transistors; minimum input signal power level; one-by-four static frequency divider; oscillation frequency; power dissipation; power supply voltage; semiconductors; static frequency divider; Circuit optimization; Current density; Flip-flops; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Signal analysis; Signal design; Switching circuits; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69308
