DocumentCode :
1878465
Title :
Resonant Metal Cantilever with Attogram/Hz Mass Sensitivity Fully Integrated in a Standard 0.35- μm CMOS Process
Author :
Verd, Jaume ; Abadal, G. ; Teva, Jordi ; Uranga, A. ; Perez-Murano, F. ; Esteve, J. ; Barniol, N.
Author_Institution :
Dep. Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), SPAIN
fYear :
2006
fDate :
22-26 Jan. 2006
Firstpage :
638
Lastpage :
641
Abstract :
This paper presents the design, fabrication and characterization of a high-sensitivity mass sensor based on a laterally resonating metal cantilever that is fully compatible with standard CMOS technologies, and which post-CMOS process is based on a single step wet etching process without the need of any additional lithographic process. The system uses electrostatic actuation and capacitive readout performed by a high-sensitivity readout circuitry monolithically integrated. The expected mass sensitivity of the metal resonators presented is around 1 ag/Hz and 4.5 ag/Hz for punctual mass and uniform mass deposition respectively. These sensitivities have been corroborated experimentally by means of two kinds of experiments: deposition of a punctual mass and deposition of a thin film of gold.
Keywords :
CMOS process; CMOS technology; Electrostatic actuators; Fabrication; Gold; Integrated circuit technology; Resonance; Sensor phenomena and characterization; Sputtering; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
Conference_Location :
Istanbul, Turkey
ISSN :
1084-6999
Print_ISBN :
0-7803-9475-5
Type :
conf
DOI :
10.1109/MEMSYS.2006.1627880
Filename :
1627880
Link To Document :
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