• DocumentCode
    1878465
  • Title

    Resonant Metal Cantilever with Attogram/Hz Mass Sensitivity Fully Integrated in a Standard 0.35- μm CMOS Process

  • Author

    Verd, Jaume ; Abadal, G. ; Teva, Jordi ; Uranga, A. ; Perez-Murano, F. ; Esteve, J. ; Barniol, N.

  • Author_Institution
    Dep. Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), SPAIN
  • fYear
    2006
  • fDate
    22-26 Jan. 2006
  • Firstpage
    638
  • Lastpage
    641
  • Abstract
    This paper presents the design, fabrication and characterization of a high-sensitivity mass sensor based on a laterally resonating metal cantilever that is fully compatible with standard CMOS technologies, and which post-CMOS process is based on a single step wet etching process without the need of any additional lithographic process. The system uses electrostatic actuation and capacitive readout performed by a high-sensitivity readout circuitry monolithically integrated. The expected mass sensitivity of the metal resonators presented is around 1 ag/Hz and 4.5 ag/Hz for punctual mass and uniform mass deposition respectively. These sensitivities have been corroborated experimentally by means of two kinds of experiments: deposition of a punctual mass and deposition of a thin film of gold.
  • Keywords
    CMOS process; CMOS technology; Electrostatic actuators; Fabrication; Gold; Integrated circuit technology; Resonance; Sensor phenomena and characterization; Sputtering; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
  • Conference_Location
    Istanbul, Turkey
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-9475-5
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2006.1627880
  • Filename
    1627880