DocumentCode
1878757
Title
Room temperature operation of blue InGaN VCSELs by optical pumping
Author
Someya, T. ; Arakawa, Y. ; Werner, R. ; Forchel, A.
Author_Institution
Inst. of Ind. Sci., Tokyo Univ., Japan
fYear
1999
fDate
28-28 May 1999
Abstract
We demonstrate the first room-temperature lasing operation of In/sub 0.1/Ga/sub 0.9/N MQW VCSELs at 399 nm by an optical pumping method. A pump energy at the threshold was 10 mJ/cm/sup 2/, which corresponds to the carrier density 2.4/spl times/10/sup 12/ cm/sup -2/ in each QW.
Keywords
III-V semiconductors; carrier density; gallium compounds; indium compounds; laser transitions; optical pumping; quantum well lasers; surface emitting lasers; 399 nm; In/sub 0.1/Ga/sub 0.9/N; In/sub 0.1/Ga/sub 0.9/N multiple quantum well VCSELs; InGaN; blue InGaN vertical cavity surface emitting lasers; carrier density; optical pumping method; pump energy; room-temperature lasing operation; Distributed Bragg reflectors; Laser excitation; Optical arrays; Optical pumping; Pulse measurements; Pump lasers; Scanning electron microscopy; Surface emitting lasers; Temperature measurement; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-595-1
Type
conf
DOI
10.1109/CLEO.1999.834616
Filename
834616
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