DocumentCode
1878812
Title
Low threshold (8 mA) 1.3-/spl mu/m CW lasing of InGaAs/InAs quantum dots at room temperature
Author
Mukai, K. ; Nakata, Y. ; Otsubo, K. ; Sugawara, M. ; Yokoyama, N. ; Ishikawa, H.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1999
fDate
28-28 May 1999
Abstract
Low threshold 1.3-/spl mu/m CW lasing of self-assembled InGaAs/GaAs quantum dots at 25/spl deg/C is presented. The developed multiplied high-density dot layers enabled us to achieve the threshold current 8 mA.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; quantum well lasers; semiconductor quantum dots; 1.3 mum; 8 mA; InGaAs-GaAs; low threshold continuous wave lasing; multiplied high-density dot layers; self-assembled InGaAs/GaAs quantum dots; threshold current; Electroluminescence; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum dots; Quantum well lasers; Temperature; Threshold current; US Department of Transportation; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-595-1
Type
conf
DOI
10.1109/CLEO.1999.834619
Filename
834619
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