Insulating layer parameters are still in reduction of kink

Semiconductor devices using selective buried oxide (SELBOX) substrate is an area of promising technology that has the capacity to exhibit high performance and overcome the drawbacks of floating body effects that affect the SOI devices. This paper presents numerical simulation results of MOSFETs on SELBOX structure and compares the electrical characteristics of device with those of devices on SOI and bulk silicon substrates. The simulation results show that the drain current kink effect, a physical phenomenon responsible for substrate floating body devices is completely suppressed above a certain drain voltage while preserving the useful advantages of SOI MOSFETs at the same time. The physical phenomenon responsible and method of minimizing kink effect with variation of different parameters is also specified.