Title :
Modeling of correlated noise in RF bipolar devices
Author :
Martin, S. ; Booth, R. ; Chyan, Y.-F. ; Frei, M. ; Goldthorp, D. ; Lee, K.H. ; Moinian, S. ; Ng, K. ; Subramaniam, Palanivel
Author_Institution :
Lucent Technols., Bell Labs., Murray Hill, NJ, USA
Abstract :
An RF noise model is proposed for high frequency bipolar transistors considering partial correlation of shot and thermal noise sources. For frequencies f/spl ges/f/sub T///spl radic//spl beta//sub 0/ expressions are derived for input noise voltage, noise current and correlation impedance. The model is verified with data obtained from a 0.5 /spl mu/m BiCMOS technology developed for RF wireless applications.
Keywords :
bipolar transistors; semiconductor device models; semiconductor device noise; shot noise; thermal noise; 0.5 micron; BiCMOS technology; RF noise model; correlation impedance; high frequency bipolar transistor; noise current; noise voltage; shot noise; thermal noise; wireless application; Active noise reduction; BiCMOS integrated circuits; Bipolar transistors; Circuit analysis; Circuit noise; Impedance; Noise figure; Noise measurement; Radio frequency; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705146
